Schottky effect model of electrical activity of metallic precipitates in silicon
- 19 June 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (25) , 3777-3779
- https://doi.org/10.1063/1.126778
Abstract
A quantitative model of the electrical activity of metallic precipitates in Si is formulated with an emphasis on the Schottky junction effects of the precipitate–Si system. Carrier diffusion and carrier drift in the Si space charge region are accounted for. Carrier recombination is attributed to the thermionic emission mechanism of charge transport across the Schottky junction rather than the surface recombination. It is shown that the precipitates can have a very large minority carrier capture cross-section. Under weak carrier generation conditions, the supply of minority carriers is found to be the limiting factor of the recombination process. The plausibility of the model is demonstrated by a comparison of calculated and available experimental results.Keywords
This publication has 7 references indexed in Scilit:
- Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applicationsJournal of Applied Physics, 1999
- Impact of Fe and Cu Contamination on the Minority Carrier Lifetime of Silicon SubstratesJournal of the Electrochemical Society, 1996
- Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an ExplanationSolid State Phenomena, 1995
- The space-charge region around a metallic platelet in a semiconductorSemiconductor Science and Technology, 1993
- A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activitySemiconductor Science and Technology, 1992
- Recombination properties of structurally well defined NiSi2 precipitates in siliconApplied Physics Letters, 1991
- Fast diffusers Cu and Ni as the origin of electrical activity in a silicon grain boundaryApplied Physics Letters, 1989