An 8-ns 256K ECL SRAM with CMOS memory array and battery backup capability
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 23 (5) , 1041-1047
- https://doi.org/10.1109/4.5922
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A 12ns 256k Bicmos SramPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- An 8ns 256k Bicmos RamPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- A 256Kb ECL RAM with RedundancyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- Titanium nitride local interconnect technology for VLSIIEEE Transactions on Electron Devices, 1987