Radiation-induced band bending on GaAs(110)
- 1 April 1989
- journal article
- Published by Elsevier in Surface Science
- Vol. 211-212, 565-571
- https://doi.org/10.1016/0039-6028(89)90815-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- The schottky-barrier of GaAs(110)-Sb studied by UV photoemissionSolid State Communications, 1985
- Surface structure and orbital symmetries of (110) surface states of GaAsJournal of Vacuum Science and Technology, 1978
- Photoemission and band-structure studies of the GaAs(110) surfaceJournal of Vacuum Science and Technology, 1977
- Influence of volume dope on Fermi level position at gallium arsenide surfacesSurface Science, 1967