Laser-assisted chemical beam epitaxy for selective growth
- 1 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4) , 389-394
- https://doi.org/10.1016/0022-0248(92)90423-g
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Laser selective area epitaxy of GaAs metal-semiconductor-field-effect transistorApplied Physics Letters, 1991
- Applications and challenges of OEIC technology: a report on the 1989 Hilton Head workshopJournal of Lightwave Technology, 1990
- Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InPJapanese Journal of Applied Physics, 1990
- Mechanism of GaAs Selective Growth in Ar+ Laser-Assited Metalorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1990
- Laser-Assisted MOMBE Growth of GaAs Using Tri-Isobutyl GalliumJapanese Journal of Applied Physics, 1989
- Carbon reduction in GaAs films grown by laser-assisted metalorganic molecular beam epitaxyApplied Physics Letters, 1989
- Selected area growth of GaAs by laser-induced pyrolysis of adsorbed triethylgalliumApplied Physics Letters, 1989
- Ar ion laser-assisted metalorganic molecular beam epitaxy of GaAsApplied Physics Letters, 1989
- AlGaAs multiple-wavelength light-emitting bar grown by laser-assisted metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Investigations of photo-association mechanism for growth rate enhancement in photo-assisted OMVPE of ZnSe and ZnSJournal of Crystal Growth, 1988