Raman scattering enhancement in porous silicon microcavity
- 27 September 1999
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (13) , 1830-1832
- https://doi.org/10.1063/1.124842
Abstract
We have measured an enhancement factor of Raman signal up to 30 times using a Fabry-Pérot structure made of porous silicon (PS) layers of different porosity. The obtained enhancement was due to the coupling of the laser radiation and Stokes photons of porous silicon with the microcavity mode at the optimal laser beam incidence and scattering angles. Our results provide a way to increase the sensitivity of Raman spectroscopy for studying the species inside porous silicon which can considerably influence the properties of this material and hence of PS based devices.Keywords
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