Characteristics of BaTiO3 Films Prepared by Pulsed Laser Deposition

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Abstract
BaTiO3 thin films possessing ferroelectric characteristics have been successfully synthesized using the laser ablation technique. The films are polycrystalline when deposited with substrate temperature higher than 550°C at 1 mbar oxygen pressure. All of the films are highly textured and dominated by (111) grains. The zero-voltage dielectric constant and ferroelectricity derived from C-V measurement increase with substrate temperature. The best properties obtained are εr=485, P r=0.32 µC/cm2, P s=2.65 µC/cm2 and E c=7.38 kV/cm. The charge storage density is highest and the leakage current density is lowest for 750°C-deposited films. They are Q c=1.14 µC/cm2 and J 1=0.55 µA/cm2, respectively. The results indicate that the BaTiO3 films are promising for application as high-density memory dielectrics.