Comment on the time-resolved photoluminescence study of MBE-growth-induced defect lines
- 20 July 1986
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 19 (20) , L445-L446
- https://doi.org/10.1088/0022-3719/19/20/005
Abstract
The conclusions of a recently published article concerning the origin of the sharp defect-related bound-exciton lines in the photoluminescence spectrum of MBE-grown GaAs are challenged.Keywords
This publication has 4 references indexed in Scilit:
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- Strongly polarized bound exciton luminescence from GaAs grown by molecular beam epitaxyApplied Physics Letters, 1985
- A model for some defect-related bound exciton lines in the photoluminescence spectrum of GaAs layers grown by molecular beam epitaxyJournal of Physics C: Solid State Physics, 1984
- The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAsApplied Physics Letters, 1980