Mechanism of non-Shockley conduction in almost ideal silicon junction diodes
- 15 May 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (10) , 3823-3830
- https://doi.org/10.1063/1.332892
Abstract
Well-gettered diodes behave as ideal Shockley diodes for forward bias. For reverse bias their characteristics may deviate from the Shockley theory according to the preparation precedure. A model for this behavior is presented; it ascribes the deviation to a generation current produced at donor-acceptor shallow levels in the depletion layer.This publication has 6 references indexed in Scilit:
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