Observation of localisation and interaction corrections to the conductivity and thermopower of a two-dimensional electron gas

Publisher Website
Google Scholar
Abstract
The authors have measured the conductivity and thermopower of silicon-on-sapphire MOSFETs at low temperatures as a function of perpendicular and parallel magnetic fields. The magnitude of the thermopower was found to decrease for perpendicular fields up to about 1 T. An explanation of this effect is offered in terms of the quenching of weak localisation and the dominance of phonon-drag effects. At higher fields, both perpendicular and parallel, the thermopower was found to increase again, which they attribute to enhancement of electron-electron interactions by the field.