Quantitative X-Ray Emission Analysis of Thin Oxide Films on Tantalum
- 1 December 1971
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (13) , 5879-5882
- https://doi.org/10.1063/1.1660037
Abstract
A low‐energy (1800‐V) electron beam is used at normal incidence to excite the characteristic x‐ray emission from oxygen in thin oxide films on smooth tantalum substrates. From films having known thickness increments, a calibration procedure is used to relate the oxygen Kα signal/background ratio to oxygen concentrations in the films. Films ranging from less than one monolayer to several hundred Å mean thickness can be measured. At the submonolayer level, oxygen concentrations of about 1×10−9 g cm−2 can be detected on a tantalum surface.This publication has 4 references indexed in Scilit:
- Oxygen Surface-Density Measurements Based on Characteristic X-Ray Production by 100-keV ProtonsJournal of Applied Physics, 1968
- Analysis of Materials by Electron-Excited Auger ElectronsJournal of Applied Physics, 1968
- REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION AND X-RAY EMISSION ANALYSIS OF SURFACES AND THEIR REACTION PRODUCTSApplied Physics Letters, 1967
- Determination of the Density and Dielectric Constant of Thin Ta[sub 2]O[sub 5] FilmsJournal of the Electrochemical Society, 1965