Raman studies ofcompounds
- 1 September 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 22 (5) , 2386-2391
- https://doi.org/10.1103/physrevb.22.2386
Abstract
The Raman spectra of transforming and nontransforming Si crystals and of nontransforming Sn were measured between 400 and 20 K. For transforming Si the frequency of the Raman peak decreases down to 120 K, but increases below this temperature. On the other hand, the width of the peak increases down to 90 K, but decreases at lower temperatures. No frequency increase and no decrease in width at low temperatures is found for the nontransforming Si sample. For Sn the peak frequency increases only little at low temperatures. These phenomena are interpreted as resulting from two Raman peaks, the first deriving from the cubic, the second from the tetragonal lattice structure. At (martensitic transition) the existence of the second peak is believed to indicate the presence of tetragonal domains. These domains are thought to be present in the transforming Si sample even at temperatures above 100 K. Practically no or little tendency for forming tetragonal structure is found in the nontransforming Si and Sn samples, respectively. The surface versus bulk question is discussed.
Keywords
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