Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy

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Abstract
We report on spatially resolved optical measurements of high-quality InGaN/GaN multiple quantum wells under conditions of direct high optical injection (>1019 cm−3) using near-field optical microscopy in the collection mode. The spectral dependence of the spatial distribution of the photoluminescence indicates that the range of In-composition fluctuations reaches the 100-nm lateral scale. The spectra are dependent on the carrier injection level and reveal significant state filling effect. We sketch tentative conclusions about the In-cluster size distribution in terms of contributions to the radiative processes that involve localized and extended states, respectively, in the regime of electron–hole (e–h) pair densities at which present diode lasers operate.