Progress of InGaN Light Emitting Diodes on SiC
Open Access
- 19 December 2002
- journal article
- research article
- Published by Wiley in physica status solidi (c)
- No. 1,p. 276-279
- https://doi.org/10.1002/pssc.200390042
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Recent progress in group-III nitride light-emitting diodesIEEE Journal of Selected Topics in Quantum Electronics, 2002
- Industrial production of GaN and InGaN-light emitting diodes on SiC-substratesJournal of Crystal Growth, 2001
- GaN-Based LEDs and Lasers on SiCPhysica Status Solidi (a), 2000
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994