Electron beam modifications of InP surfaces
- 1 July 1987
- journal article
- Published by Wiley in Journal of Microscopy
- Vol. 147 (1) , 75-81
- https://doi.org/10.1111/j.1365-2818.1987.tb02819.x
Abstract
SUMMARY: InP surfaces have been modified by using the intense electron beam of a V.G. HB501 STEM and subsequently examined in the same instrument using the reflection microscopy geometry. The surface changes can be divided into two parts; first, a fairly local removal of material, and second, more widespread effects including faceting and the formation of an oxide layer which extends for several microns around the point of incidence of the electron beam.Keywords
This publication has 12 references indexed in Scilit:
- Electron energy-loss spectroscopy studies of nanometre-scale structures in alumina produced by intense electron-beam irradiationPhilosophical Magazine Part B, 1987
- In situoxidation processes for In III-V compound semiconductors studied by high-resolution electron microscopyPhilosophical Magazine A, 1986
- Laser-induced fluorescence studies of excimer laser ablation of Al2O3Applied Physics Letters, 1986
- Auger electron beam effects on electrical properties and surface composition of InP surfacesSurface Science, 1985
- Visualization of submonolayers and surface topography by biassed secondary electron imaging: Application to Ag layers on Si and W surfacesSurface Science, 1985
- Auger electron spectroscopy and electron loss spectroscopy comparative study of vacuum annealing effects on InP surfaceJournal of Applied Physics, 1985
- Optically enhanced oxidation of III-V compound semiconductorsJournal of Applied Physics, 1985
- Electron energy loss spectra and reflection images from surfacesJournal of Microscopy, 1984
- Low-energy electron losses by plasmon excitations as control means of the growth of epitaxial layersJournal of Applied Physics, 1980
- Electron-stimulated oxidation of InP (100) surfaces studied by Auger electron spectroscopy and by low-energy-loss spectroscopyJournal of Applied Physics, 1980