High precision structural measurements on thin epitaxial layers by means of ion-channeling
- 1 January 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 44 (3) , 357-366
- https://doi.org/10.1016/0168-583x(90)90651-a
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- On the mechanisms of strain release in molecular-beam-epitaxy-grown InxGa1−xAs/GaAs single heterostructuresJournal of Applied Physics, 1989
- Ion beam crystallography of surfaces and interfacesSurface Science Reports, 1985
- Strain measurements by channeling angular scansApplied Physics Letters, 1983