Strain measurements by channeling angular scans
- 1 December 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (11) , 1020-1022
- https://doi.org/10.1063/1.94214
Abstract
We demonstrate the first direct measurement of strain in InxGa1−xAs/GaAs strained-layer superlattices by ion channeling angular scans. This technique permits quantitative measurement of the strain without requiring computer simulations of dechanneling. The measurements are generally applicable to the study of strain in heteroepitaxial layers.Keywords
This publication has 7 references indexed in Scilit:
- Ion channeling studies of InGaAs/GaAs strained-layer superlatticesApplied Physics Letters, 1983
- Ion dechanneling due to lattice strains in semiconductor superlatticesPhysical Review B, 1983
- Transition from the Pseudomorphic State to the Nonregistered State in Epitaxial Growth of Au on Pd(111)Physical Review Letters, 1983
- A GaAsxP1−x/GaP strained-layer superlatticeApplied Physics Letters, 1982
- Relaxation effects and thermal vibrations in a Pt(111) surface measured by medium energy ion scatteringSurface Science, 1979
- Lattice Location by Channeling Angular Distributions: Bi Implanted in SiPhysical Review B, 1972
- Channeling of MeV Projectiles in Tungsten and SiliconPhysical Review B, 1968