Impact ionization phenomena in AlGaAs/GaAs HEMTs
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (11) , 2571-2573
- https://doi.org/10.1109/16.97428
Abstract
The impact ionization current in AlGaAs/GaAs HEMT's is evaluated by means of measurements of the gate current at high drain voltages. A previously reported method to calculate impact ionization coefficient in GaAs MESFET's is extended to HEMT's. Results agree with the hypothesis that impact ionization takes place nearly exclusively in GaAs, and closely follow previously reported data for the electron impact ionization coefficient in GaAsKeywords
This publication has 11 references indexed in Scilit:
- Comments, with reply, on 'Impact ionization in GaAs MESFETs' by K. Hui, et alIEEE Electron Device Letters, 1991
- Impact ionization in GaAs MESFETsIEEE Electron Device Letters, 1990
- Surface potential effect on gate—Drain avalanche breakdown in GaAs MESFET'sIEEE Transactions on Electron Devices, 1987
- Two-dimensional numerical analysis of the high electron mobility transistorIEEE Electron Device Letters, 1984
- Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterizationIEEE Transactions on Electron Devices, 1984
- Gate-drain avalanche breakdown in GaAs power MESFET'sIEEE Transactions on Electron Devices, 1982
- Power-limiting breakdown effects in GaAs MESFET'sIEEE Transactions on Electron Devices, 1981
- Excess gate current analysis of junction gate FET's by two- dimensional computer simulationIEEE Transactions on Electron Devices, 1978
- The band structure dependence of impact ionization by hot carriers in semiconductors: GaAsSolid-State Electronics, 1978
- Field distribution in junction field-effect transistors at large drain voltagesIEEE Transactions on Electron Devices, 1975