Edge Emission in Zinc Selenide Single Crystals

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Abstract
Edge emission in single crystals of ZnSe subjected to ultraviolet radiation at low temperatures has been examined in the temperature interval from 4.2° to 77°K. Two distinct edge emission spectra have been found indicating that two different types of single crystals exist. For type I crystals the edge emission spectrum at 4.2°K contains 10 lines located between 4400 A and 4800 A; at 77°K the emission spectrum contains two lines. For type II crystals the edge emission spectrum at 4.2°K contains 14 lines located between 4400 A and 4900 A; at 77°K the emission spectrum contains three lines, one of which is located at the fundamental absorption edge of the crystal. Both crystal emissions show evidence of phonon interaction with the ZnSe lattice and both emissions undergo significant reductions in intensity as the crystal temperature increases from 4.2° to 77°K.