Cubic boron nitride films synthesized by low-energy ion-beam-enhanced vapor deposition

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Abstract
Single phase-cubic boron nitride (cBN) films have been synthesized by means of the low-energy ion-beam-enhanced vapor deposition method. Cubic BN films were deposited at 4 nm min−1 by electron-beam evaporation of boron with N2+Ar ion beam bombardment under the energy range of 500–600 eV, at ion beam current density around 0.4 mA cm−2, and also, could be obtained in both cases with external rf or dc substrate biasing. The infrared spectra showed strong absorption at 1090 cm−1, which was shifted significantly towards a higher wave number due to the residual internal stress in the cBN films. High-resolution transmission electron microscopy of cBN films deposited showed that the microstructure consists of polycrystalline particles with a size of 10 nm.