Surface quality and atomic structure of MBE-grown GaAs(100) prepared by the desorption of a protective arsenic layer
- 15 May 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 352-354, 71-76
- https://doi.org/10.1016/0039-6028(95)01093-9
Abstract
No abstract availableKeywords
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