X-Ray Photoelectron Spectroscopy Studies of Titanium Nitride Barrier Metals Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition
- 1 July 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (7B) , L907
- https://doi.org/10.1143/jjap.34.l907
Abstract
Titanium nitride (TiN) films prepared by means of low-pressure metalorganic chemical vapor deposition (LP-MOCVD) with the tetrakis-dimethyl-amino titanium (TDMAT) and ammonia, attempting for producing conformal barrier metals for ultra-large scale integrated devices, are studied by means of X-ray photoelectron spectroscopy (XPS) in conjunction with Ar ion bombardment. In the detailed analysis of XPS spectra of the C 1 s region composed of two peaks corresponding to the chemical bondings of hydrocarbon and Ti-C, it is found that the relative intensity ratio between two peaks can be a direct measure of film properties, and that the chemical bonding of hydrocarbon dominates as the film thickness increases and the deposition temperature decreases.Keywords
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