Preparation and Characterization of Pb(ZrxTi1-x)O3 Thin Films by Reactive Sputtering Using an Alloy Target
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9S) , 4122-4125
- https://doi.org/10.1143/jjap.32.4122
Abstract
Pb(Zr x , Ti1-x )O3 (PZT) thin films were deposited on Pt/SiO2/Si substrates by rf-magnetron sputtering using an alloy target consisting of Zr-Ti alloy and a Pb metal. When an alloy target was used in reactive sputtering, no change was observed in the Zr/Ti ratio of the films for up to 300 h for target uses. The (111)-oriented PZT films were successfully grown at substrate temperatures of 605-620°C. The coercive fields (E c) and remanent polarizations (P r) of the films with only the perovskite phase were in the range of 70-72 kV/cm and 20-22 µC/cm2, respectively. In fatigue behavior, switched charge density started to drop at 108 cycles.Keywords
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