Preparation of Pb(Zr, Ti)O3 Films on Si Substrate by Laser Ablation
- 1 September 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (9S) , 2965
- https://doi.org/10.1143/jjap.31.2965
Abstract
Lead-zirconate-titanate (PZT) thin films were prepared on oxidized Si(100)-substrate with a thin film electrode by laser ablation. Ferroelectric perovskite phase was obtained in the PZT films on Ni-alloy/SiO2/Si substrate with the substrate temperature above 500°C, but it was not obtained in the films on Pt/SiO2/Si. The switching voltage of remanent polarization (P r) decreased with decreasing PZT film thickness. The 0.15-µm-thick film showed P r of 15 µC/cm2 with a swing voltage of 5 V.Keywords
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