Evaluation of the minority carrier diffusion length and edge surface-recombination velocity in GaAs p/n solar cells
- 1 October 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (7) , 2919-2922
- https://doi.org/10.1063/1.351494
Abstract
The hole minority carrier diffusion length (Lp) and the edge surface-recombination velocity (Vs) were measured as a function of distance (x) from the p-n junction in GaAs p/n concentrator solar cells. The measured Vs values were used in a theoretical expression for the normalized electron beam-induced current. A fit of the experimental data was used to determine Lp. Lp measured in irradiated cells showed a marked reduction as compared to the unirradiated cells. Our results were compared to results obtained in previous studies that did not account for Vs.This publication has 8 references indexed in Scilit:
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