Voltage-tunable quantum dots on silicon
- 15 January 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (3) , 1699-1702
- https://doi.org/10.1103/physrevb.41.1699
Abstract
Employing electrostatic confinement with a dual-gate device we realize periodic arrays of electron dots on Si widely tunable in diameter and electron number. From far-infrared transmission studies of dimensional resonances, we deduce dot diameters down to 40 nm for as little as 20 electrons in quantum states spaced by more than 5 meV. Excitation energies as well as mode dispersions in finite magnetic fields are found to strongly depend on the strength and the shape of the lateral confining potential. A detailed analysis of the oscillator strengths indicates a direct effect of strong quantum confinement.Keywords
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