Efficient shallow-homojunction GaAs solar cells by molecular beam epitaxy
- 15 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (10) , 804-806
- https://doi.org/10.1063/1.90943
Abstract
Conversion efficiencies up to 16% at AM1 have been obtained for molecular beam epitaxy (MBE) GaAs solar cells utilizing a shallow‐homojunction n+/p/p+ structure without a GaAlAs window. The n+, p, and p+ GaAs layers were all grown by MBE on single‐crystal p+ GaAs substrates. Cell metallization was performed by electroplating, and an antireflection coating was formed by anodic oxidation of the n+ layer. These cells are the first efficient MBE solar cells of any type to be reported.Keywords
This publication has 4 references indexed in Scilit:
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