Recovery of damaged GaAs diodes by minority carrier injection

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Abstract
A new approach to reduce ion implantation damage at low temperature is demonstrated for the first time. Damage in Be-ion-implanted GaAs p+-n diodes and its reduction by minority carrier injection have been evaluated. Ion implantation increases the recombination current in the diodes, but the current can be reduced by minority carrier injection even at room temperature. The reduction is due to minority carriers themselves, not to the thermal annealing. Traps which act as recombination centres and decrease in concentration by injection are detected in the diodes, indicating that the reduction in recombination current is due to the recombination-enhanced defect reaction. The traps are different from those observed in electron-irradiated GaAs. The rate of recombination current reduction is also discussed. Minority carrier injection holds considerable promise as a low-temperature annealing method to reduce damage induced by ion implantation.

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