Residual defects in implanted silicon after annealing with incoherent light
- 16 April 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 94 (2) , 767-772
- https://doi.org/10.1002/pssa.2210940242
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Dislocation reactions in arsenic-implanted and annealed siliconPhysica Status Solidi (a), 1976
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974