Junction leakage studies in rapid thermal annealed diodes

Publisher Website
Google Scholar
Abstract
A detailed and comprehensive study of As-implanted Si annealed using incoherent tungsten radiation has been perfomed. The study emphasized the leakage currrent results, correlating them with the junction depths obtained from Rutherford backscattering measurements, and the residual damage observed in transmission electron microscopy (TEM). Sheet resistance measurements, as well as comparisons with wafers annealed in conventional furnaces, were also made. It was found that higher temperatures and shorter times resulted in lower leakage currents for given junction depths. We also found that the absence of residual dislocations in TE studies of annealed wafers was not a sufficient indication of low junction leakage.