Thermally assisted flash annealing of silicon and germanium
- 15 October 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (8) , 751-753
- https://doi.org/10.1063/1.90528
Abstract
The radiant energy from high‐intensity xenon flash lamps can be used to anneal damage in semiconductors if the sample is moderately heated before and during the flash. The annealing takes place in air via the solid‐phase epitaxy process in <50 μsec and does not alter doping profiles or result in loss of volatile species.Keywords
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