Stability of phase-separated microstructure in LPE-grown InGaAs epitaxial layers
- 1 December 1994
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 28 (1-3) , 209-213
- https://doi.org/10.1016/0921-5107(94)90049-3
Abstract
No abstract availableKeywords
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