Total energy of isolated point defects in solids
- 15 August 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (4) , 2296-2298
- https://doi.org/10.1103/physrevb.28.2296
Abstract
Total-configurational-energy calculations have already been very successfully carried out for periodic structures and for isolated molecules, allowing one to study, e.g., crystal structures, reconstructions, and vibrational frequencies. We describe here for the first time a method for calculating the total energy of isolated, charged, point defects in an infinite crystal. It uses the self-consistent Green's-function technique. We demonstrate its quantitative utility be applying it to two defects in to two defects in GaP.Keywords
This publication has 17 references indexed in Scilit:
- Total energies in Se. III. Defects in the glassPhysical Review B, 1983
- Tractable Approach for Calculating Lattice Distortions around Simple Defects in Semiconductors: Application to the Single Donor Ge in GaPPhysical Review Letters, 1982
- Enfeebled oxygen bonding and metastability in GaP:OPhysical Review B, 1982
- Validity of the frozen-core approximation and pseudopotential theory for cohesive energy calculationsPhysical Review B, 1980
- Negative-U Properties for Point Defects in SiliconPhysical Review Letters, 1980
- New self-consistent approach to the electronic structure of localized defects in solidsPhysical Review B, 1979
- Calculation of Defect States in Amorphous SeleniumPhysical Review Letters, 1979
- Proof thatin density-functional theoryPhysical Review B, 1978
- Electronic Structure of the Single Vacancy in SiliconPhysical Review B, 1971
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965