GaAs-laser-induced population inversion in the ground-state hyperfine levels of Cs133

Publisher Website

1 May 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics

Vol. 7 (5) , 196-198
https://doi.org/10.1109/jqe.1971.1076636

Abstract

No abstract available

Keywords

This publication has 7 references indexed in Scilit:

JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
Applied Physics Letters, 1970
Display of 8521-Å line of cesium utilizing a swept GaAs laser
IEEE Journal of Quantum Electronics, 1969
Lasing wavelength of a GaAs injection laser
Solid-State Electronics, 1968
Current Dependence of Junction Temperature in C-W Operated GaAs Laser Diodes
Japanese Journal of Applied Physics, 1967
Relaxation of Optically Pumped Rb Atoms on Paraffin-Coated Walls
Physical Review B, 1966
The optically pumped rubidium maser
Proceedings of the IEEE, 1966
Hyperfine Relaxation of Optically Pumped ${Rb}^{87}$ Atoms in Buffer Gases
Physical Review B, 1964