Lasing wavelength of a GaAs injection laser
- 1 January 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (1) , 129-134
- https://doi.org/10.1016/0038-1101(68)90143-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Absorption Edge of Impure Gallium ArsenidePhysical Review B, 1965
- Approximate calculation of the spectral function for the stimulated recombination radiation in semiconductorsSolid-State Electronics, 1965
- Effect of temperature on the stimulated emission from GaAs p-n junctionsSolid-State Electronics, 1964
- Infrared Transmission and Fluorescence of Doped Gallium ArsenidePhysical Review B, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Recombination radiation and stimulated emission in GaAsSolid-State Electronics, 1963
- BAND-FILLING MODEL FOR GaAs INJECTION LUMINESCENCEApplied Physics Letters, 1963
- Optische Bestimmung der Temperaturabhängigkeit des Bandabstandes von Halbleitern des Typus AIIIBVZeitschrift für Naturforschung A, 1955