Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
Open Access
- 27 May 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (21) , 3955-3957
- https://doi.org/10.1063/1.1481782
Abstract
The change of band banding with the crystal polarity of GaNfilms was investigated using high-resolution photoemission spectroscopy. Compared with a N-face sample, the Ga-face sample exhibited higher Schottky barrier height and lower contact resistivity of a Ti/Al-based Ohmic contact. It was found that Ga-face GaN has a larger surface band bending than N-face GaN by 1.4 eV due to spontaneous polarization, resulting in higher Schottky barrier height. The lower Ohmic contactresistivity on Ga-face GaN originated from the formation of polarization-induced two-dimensional electron gas at the interface of AlN with GaN.Keywords
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