Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN

This publication has 10 references indexed in Scilit:

• Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN
  Applied Physics Letters, 1997
• Low resistance ohmic contact to n-GaN with a separate layer method
  Solid-State Electronics, 1997
• Effects of annealing on Ti Schottky barriers on n -type GaN
  Electronics Letters, 1997
• Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN
  Applied Physics Letters, 1996
• Ohmic contacts to n-type GaN using Pd/Al metallization
  Journal of Electronic Materials, 1996
• Very low resistance multilayer Ohmic contact to n-GaN
  Applied Physics Letters, 1996
• Electrical characterisation of Ti Schottky barrierson n -type GaN
  Electronics Letters, 1994
• Low resistance ohmic contacts on wide band-gap GaN
  Applied Physics Letters, 1994
• Chemical and structural analyses of the titanium nitride/alpha (6H)-silicon carbide interface
  Journal of Vacuum Science & Technology A, 1992
• The effects of contact size and non-zero metal resistance on the determination of specific contact resistance
  Solid-State Electronics, 1982