A two-dimensional model for the calculation of common-emitter current gains of lateral p-n-p transistors
- 30 September 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (9) , 821-826
- https://doi.org/10.1016/0038-1101(68)90102-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- On the variation of gain in lateral transistors with bias currentSolid-State Electronics, 1967
- Three-dimensional boundary-value problems in integrated circuitsSolid-State Electronics, 1967
- Theory of lateral transistorsSolid-State Electronics, 1967
- Transient Response of a p-n JunctionJournal of Applied Physics, 1954