Millimeter-wave power HEMTs
- 31 October 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (10) , 1575-1579
- https://doi.org/10.1016/s0038-1101(97)00107-x
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMTIEEE Microwave and Guided Wave Letters, 1991
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980