Photoluminescence enhancement in post-growth hydrogenated Ga1−xAlxAs (0≤x≤0.32) and GaAs/GaAlAs multilayer structures
- 17 April 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (16) , 1522-1524
- https://doi.org/10.1063/1.101339
Abstract
Low‐temperature photoluminescence measurements in undoped Ga1−xAlxAs (0≤x≤0.32) and GaAs/GaAlAs quantum structures grown by molecular beam epitaxy are performed before and after hydrogen plasma exposure. In both cases we observe a strong enhancement of the luminescence after the exposure. In the GaAlAs epilayers this enhancement clearly depends on the Al concentration in the alloy. The results are explained in terms of passivation of nonradiative traps in the GaAlAs that increases the carriers’ lifetime and diffusion length allowing, in the case of the multilayers, a greater number of carriers to recombine in the quantum well.Keywords
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