The role of geometric considerations in the diamond-cubic boron nitride heteroepitaxial system
- 15 February 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (4) , 2679-2681
- https://doi.org/10.1063/1.348663
Abstract
We report the methods and results of a theoretical study of the diamond‐cubic boron nitride [BNcub] heteroepitaxial system. We introduce a general, geometric reciprocal space technique for evaluating candidate epitaxial configurations, and a novel system of essentially geometric criteria to order them from most to least likely to occur. In the diamond‐ BNcub system, it is found that low index like planes require a relatively small strain of 1.37% from bulk parameters. The unlike epitaxial configuration which pairs diamond{100} with BNcub{221} and yields two‐dimensional coincidence with the same strain is favored above other low index mixed configurations. The essentially geometric nature of this epitaxial system is highlighted.This publication has 9 references indexed in Scilit:
- Epitaxial growth of diamond thin films on cubic boron nitride {111} surfaces by dc plasma chemical vapor depositionApplied Physics Letters, 1990
- Study of crystallographic orientations in the diamond film on cubic boron nitride using Raman microprobeApplied Physics Letters, 1990
- Influence of misfit and bonding on the mode of growth in epitaxyPhysical Review B, 1989
- Equilibrium interaction potential and height of an argon adatom on an Ar(001) crystal surfaceThin Solid Films, 1988
- Solid lubricating fluorine-containing polymer film synthesized by perfluoropolyether sputteringThin Solid Films, 1988
- Author indexThin Solid Films, 1987
- X-ray section topographs of a vapour-grown diamond film on a diamond substrateThin Solid Films, 1987
- Analytical selection of ideal epitaxial configurations and some speculations on the occurrence of epitaxy I. Epitaxy with rectangular interfacial atomic meshesPhilosophical Magazine A, 1982
- Rotation and Translation of Islands in the Growth of Heteroepitaxial FilmsJournal of Applied Physics, 1968