Novel seeding method for the growth of polycrystalline Si films with hemispherical grains

13 July 1992

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 61 (2) , 159-161
https://doi.org/10.1063/1.108204

Abstract

A novel method for the fabrication of hemispherical‐grained polycrystalline Si (HSG‐Si) films, which is applicable to high capacitance storage electrodes for dynamic random access memory (DRAM) cells, has been developed. This technique consists of first seeding a clean amorphous‐Si (a‐Si) surface with crystalline Si nuclei at an elevated substrate temperature using Si molecular‐beam deposition. Upon subsequent isothermal annealing under ultrahigh vacuum conditions, it was found that the Si microcrystals act as nuclei for the formation of HSG‐Si. Precise control of the grain size distribution of the HSG‐Si structure was successfully demonstrated, which is key to the possible application of this material to the next generation of DRAM devices.

Keywords

This publication has 2 references indexed in Scilit:

Crystallization of Amorphous Silicon with Clean Surfaces
Japanese Journal of Applied Physics, 1991
New stacked capacitor structure using hemispherical-grain polycrystalline-silicon electrodes
Applied Physics Letters, 1991