Shallow trench isolation double-diobe electrostatic discharge circuit and interaction with DRAM output circuitry
- 31 December 1993
- journal article
- Published by Elsevier in Journal of Electrostatics
- Vol. 31 (2-3) , 237-262
- https://doi.org/10.1016/0304-3886(93)90011-u
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Kelvin probe force microscopyApplied Physics Letters, 1991
- Effect of junction curvature on breakdown voltage in semiconductorsSolid-State Electronics, 1966