Impact of vacancies and self-interstitials on the formation of substitutional transition metal defects in float-zone silicon crystals
- 15 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 273-274, 398-403
- https://doi.org/10.1016/s0921-4526(99)00490-1
Abstract
No abstract availableKeywords
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