N incorporation in InP and band gap bowing of InNxP1−x
- 1 August 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (3) , 1934-1936
- https://doi.org/10.1063/1.362945
Abstract
The N incorporation behavior in InP grown by gas‐source molecular beam epitaxy using a N radical beam source has been investigated. At a given growth temperature, the N composition in InNxP1−x is generally different from the N2 flow‐rate fraction in the vapor phase, and as the N2 flow‐rate fraction increases, it saturates after increasing to a certain point. This may be due to the small solubility of N in InP. Increasing the growth temperature will result in a loss of N incorporation into the InP as a result of the faster desorption of the N at high temperatures. Optical absorption measurements reveal that the band‐gap energy of InNxP1−x decreases drastically, resulting in band‐gap bowing.This publication has 23 references indexed in Scilit:
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