UHF-1: a high speed complementary bipolar analog process on SOI
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A complementary silicon bipolar process has been developed for high-performance analog applications. The process features high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz, respectively. The transistors have a double polysilicon, self-aligned structure which is isolated by using bonded wafer silicon-on-insulator (SOI) technology and vertical trenches. The circuit components are interconnected with two levels of metallization. The UHF-1 process has been used to create several advanced analog high-frequency integrated circuits in a monolithic form.<>Keywords
This publication has 1 reference indexed in Scilit:
- Polysilicon emitters for bipolar transistors: a review and re-evaluation of theory and experimentIEEE Transactions on Electron Devices, 1992