Determination of residual strain by reflectivity, X-ray diffraction and Raman spectroscopy in ZnSe epilayers grown on GaAs (001), InP(001) and GaSb(001) by metal-organic vapor phase epitaxy
- 1 November 1993
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 21 (2-3) , 257-261
- https://doi.org/10.1016/0921-5107(93)90361-p
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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