Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSb
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 199-203
- https://doi.org/10.1016/0022-0248(90)90965-n
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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