Systematic design of dissipative and regenerative snubbers
- 1 January 1989
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1320-1327
- https://doi.org/10.1109/ias.1989.96814
Abstract
Current commutation between diodes and switches is possible in hard-switching power stages over a wide di/dt range (10-1000+A/ mu s) with modern power devices and hardware practice. However, a definitive procedure does not exist for setting di/dt at diode reverse recovery. Diode turn-off performance is therefore examined, using IGBTs (insulated-gate bipolar transistors) to switch the diode current, to establish whether there exists an optimal di/dt that minimizes energy loss associated with diode recovery, when simple snubber-inductance reset circuits are used. Destructive parasitic oscillation, induced in inverse-parallel IGBTs across reverse-recovering freewheel diodes in IGBT modules, was observed during experimentation. The results indicate that snubberless power-stagKeywords
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