A deep-submicrometer MOSFET model for analog/digital circuit simulations
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Deep-submicrometer MOS device fabrication using a photoresist-ashing techniqueIEEE Electron Device Letters, 1988
- Generalized scaling theory and its application to a ¼ micrometer MOSFET designIEEE Transactions on Electron Devices, 1984