Strain-controlled Si-Ge modulation-doped FET with ultrahigh hole mobility

1 February 1991

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 12 (2) , 71-73
https://doi.org/10.1109/55.75707

Abstract

A novel modulation-doped field effect transistor (MODFET) with a strain-controlled Ge channel, p-Si/sub 0.5/Ge/sub 0.5//Ge/Si/sub 1-x/Ge/sub x/, is fabricated by molecular beam epitaxy (MBE). In order to enlarge the valence-band discontinuity, strain at the p-Si/sub 0.5/Ge/sub 0.5//Ge interface is controlled by changing the composition of the relaxed Si/sub 1-x/Ge/sub x/ layer. For this MODFET operated at around 77 K, an ultrahigh-field-effect mobility of approximately 9000 cm/sup 2//V-s is obtained.<>

Keywords

This publication has 12 references indexed in Scilit:

High Hole Mobility in Modulation-Doped and Strain-Controlled p-Si_0.5Ge_0.5/Ge/Si1-X_s GeX_s Heterostructures Fabricated Using Molecular Beam Epitaxy
Japanese Journal of Applied Physics, 1990
Observation of a two-dimensional hole gas in boron-doped Si0.5Ge0.5/Ge heterostructures
Applied Physics Letters, 1989
Indirect band gap and band alignment for coherently strained ${Si}_{x}$ ${Ge}_{1 - x}$ bulk alloys on germanium (001) substrates
Physical Review B, 1986
Enhancement- and depletion-mode p-channel Ge_xSi_1-xmodulation-doped FET's
IEEE Electron Device Letters, 1986
Determination of carrier saturation velocity in high-performance In_yGa_1-yAs/Al_xGa_1-xAs modulation-doped field-effect transistors (0 ≤ y ≤ 0.2)
IEEE Electron Device Letters, 1986
The n-channel SiGe/Si modulation-doped field-effect transistor
IEEE Transactions on Electron Devices, 1986
Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−y substrates
Applied Physics Letters, 1986
Temperature dependence of hole mobility in GaAs-Ga1−xAlxAs heterojunctions
Applied Physics Letters, 1985
Strain-Induced Two-Dimensional Electron Gas in Selectively Doped $Si / {Si}_{x} {Ge}_{1 - x}$ Superlattices
Physical Review Letters, 1985
Saturation in the transfer characteristics of (Al,Ga)As/GaAs modulation-doped field-effect transistors at 77 K
Applied Physics Letters, 1984